Educational Community License v2.0

项目介绍

ACMmodel/ACM-MOSFET-models 是一个托管在 GitHub 上的开源项目,采用 Educational Community License v2.0 许可证,目前获得 56 个 Star、11 次 Fork。

仓库全名
ACMmodel/ACM-MOSFET-models
开源许可证
Educational Community License v2.0
Star 数
56
Fork 数
11

README 摘要

ACM model repository: Advanced Compact MOSFET models The Advanced Compact MOSFET (ACM) models are charge-based MOSFET models for the design and simulation of analog, mixed-signal and RF circuits. Currents, charges, transconductances and capacitances are single-piece expressions valid in all regions of operation, from weak to strong inversion, and the models preserve the source-drain symmetry of the transistor. Each…

完整内容见 GitHub 原始 README 或本页 。

常见问题

ACM-MOSFET-models 可以免费商用吗?

仓库标注的许可证为 Educational Community License v2.0,商用前请先阅读仓库 LICENSE 文件确认授权范围。

如何获取 ACM-MOSFET-models 的源码?

可以直接克隆仓库:git clone https://github.com/ACMmodel/ACM-MOSFET-models.git,默认分支为 main;安装与运行步骤见仓库 README。

ACM-MOSFET-models 最近还在维护吗?

仓库最近一次更新为 10月7日,当前没有未关闭的 Issue;Star 数为 56,可作为社区活跃度的参考。

关于

A simple MOSFET model with only 5-DC-parameters for circuit simulation

描述取自 GitHub 官方 API,中文内容由 GitRead 中文社区 编辑团队整理。

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README

ACM model repository: Advanced Compact MOSFET models

The Advanced Compact MOSFET (ACM) models are charge-based MOSFET models for the design and simulation of analog, mixed-signal and RF circuits. Currents, charges, transconductances and capacitances are single-piece expressions valid in all regions of operation, from weak to strong inversion, and the models preserve the source-drain symmetry of the transistor. Each model is one Verilog-A module for NMOS (type=1) and PMOS (type=-1), so it runs in proprietary and open-source circuit simulators.

Models

Model Version DC parameters Source Equations and plots
ACM2 2.0.0 5: vt0, ish, n, sigma, zeta models/acm2.va web page
ACM3 3.0.0 8: vt0, ish, phi, gamma, theta, sigma_wi, sigma_si, zeta models/acm3.va web page
ACM2 2V0 pre-release (v1.0.0) 5 legacy/Verilog-A/ 2V0 report (PDF)
  • ACM2 has a constant slope factor n; sigma sets the drain-induced barrier lowering (DIBL) and zeta the velocity saturation.
  • ACM3 adds a slope factor that depends on the gate voltage through the body-effect parameters phi and gamma, mobility reduction (theta), and a DIBL coefficient that changes from sigma_wi in weak inversion to sigma_si in strong inversion, normalized by the technology supply voltage vddmax.
  • ACM2 2V0 is the pre-release code (separate NMOS and PMOS modules), kept with its examples in legacy/. Its parameter interface differs from that of version 2.0.0: its cards and test benches do not run with models/acm2.va.

In ACM2 2.0.0 and ACM3 3.0.0, the specific current of a device is I_S = ish·w/l: one card covers every width at its length. The model pages (acmmodel.github.io/ACM-MOSFET-models) give every equation of the Verilog-A code, in the order of the code, with the parameters and the DC, small-signal, capacitance, RF and noise characteristics of an IHP SG13G2 NMOS device.

Repository layout

Folder Contents
models/ the models (Verilog-A)
cards/ihp_sg13g2/ .model cards for the IHP SG13G2 low-voltage NMOS and PMOS devices, for each model
examples/ngspice/ eight example circuits, one deck per model, with their expected results
colab/ parameter extraction from your own or the public IHP I-V data (Google Colab), one notebook per model
docs/ model web pages (GitHub Pages), parameter tables, technical papers, presentations and the 2V0 report
legacy/ the 2V0 code and its examples (Sky130, IHP SG13G2 and GF180MCU; resistive-feedback LNA design)
images/ logos

Quick start (ngspice)

Compile a model once with OpenVAF-Reloaded and load it with pre_osdi:

openvaf-r models/acm3.va -o models/acm3.osdi
* NMOS, W = 10 um, L = 0.13 um, IHP SG13G2 card
.temp 27
.include cards/ihp_sg13g2/acm3_nmos_perL.lib
N1 d g 0 0 acm3n_L0p13 w=10u l=0.13u ad=3.4p as=3.4p pd=20.68u ps=20.68u
Vd d 0 0.6
Vg g 0 0.6
.control
pre_osdi models/acm3.osdi
op
print i(Vd)
.endc
.end

For ACM2, write acm2 in place of acm3 (model file, card file and card name acm2n_L0p13). Model parameters (type, the DC parameters, capacitance, temperature and noise parameters) go on the .model line; the device line takes only w, l, ad, as, pd, ps, m, dtemp, avt0, ak, rg. Every parameter, with its default, range and units, is listed in docs/parameters.md.

IHP SG13G2 cards

cards/ihp_sg13g2/<model>_{nmos,pmos}_point.lib hold one card per measured geometry (38 NMOS, 38 PMOS; W = 0.15-10 um, L = 0.12-10 um); <model>_{nmos,pmos}_perL.lib hold one card per length for W >= 2 um. Each card states the W and L of its extraction. DC parameters: extracted from the public IHP measurements (IHP-Open-PDK, 27 C, V_B = 0). Oxide, overlap, charge-length and junction parameters: fitted to the IHP PSP103 card. Temperature, flicker-noise and mismatch parameters are not extracted (model defaults). See cards/README.md.

Examples

Device characterization, common-source amplifier and current mirror, differential pair, inverter and ring oscillator, latch, D flip-flop, resistive-feedback LNA and LC-VCO, each with its expected results for ACM2 and ACM3 and the IHP PSP103 values for reference: examples/ngspice/README.md.

Parameter extraction

Open the notebook of your model in Google Colab: ACM2, ACM3. Each fits the DC parameters to any of the 76 public IHP devices or to your own I-V files and exports a .model card with ish and the W and L of the extraction.

Documentation

Citation

Researchers are kindly requested to cite the paper of the model they use and this repository.

ACM2:

D. G. A. Neto et al., “Design-Oriented Single-Piece 5-DC-Parameter MOSFET Model,” IEEE Access, vol. 12, pp. 87420–87437, 2024, doi: 10.1109/ACCESS.2024.3417316.

ACM3:

D. G. A. Neto, M. C. Schneider, M. J. Barragan, S. Bourdel, and C. Galup-Montoro, “ACM3—An Advanced Compact MOSFET Model for Analog IC Design and Simulation,” accepted for publication, 2026 (journal and DOI: to be added).

Repository:

D. G. A. Neto, M. C. Schneider, M. J. Barragan, S. Bourdel, and C. Galup-Montoro, “Advanced Compact MOSFET Model 2 (ACM2),” 2026. [Online]. Available: https://doi.org/10.5281/zenodo.20434089

Authors

Deni Germano Alves Neto¹⁺² Gabriel Maranhão Soares¹ Márcio Cherem Schneider¹ Manuel J. Barragan² Sylvain Bourdel² Carlos Galup-Montoro¹

Past developer of ACM2: Cristina Missel Adornes¹.

Affiliations

UFSC Logo

¹ Federal University of Santa Catarina, 88040-900 Florianópolis, Brazil.

TIMA Logo

² Univ. Grenoble Alpes, Grenoble INP, CNRS, TIMA, 38000 Grenoble, France.

More about the ACM model: Integrated Circuit Laboratory @ Universidade Federal de Santa Catarina

Contact

Requests for more information about the ACM models can be emailed to [email protected]

License

The ACM models are released under the ECL-2.0 license.

The copyright details are:

    Copyright 2023 Universidade Federal de Santa Catarina Licensed under the
    Educational Community License, Version 2.0 (the "License"); you may
    not use this file except in compliance with the License. You may
    obtain a copy of the License at

http://opensource.org/licenses/ECL-2.0

    Unless required by applicable law or agreed to in writing,
    software distributed under the License is distributed on an "AS IS"
    BASIS, WITHOUT WARRANTIES OR CONDITIONS OF ANY KIND, either express
    or implied. See the License for the specific language governing
    permissions and limitations under the License.

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